Breakthrough Performance

Wolfspeed’s new 1200V SiC six-pack modules set a new benchmark for high-power inverters, utilizing Gen 4 SiC MOSFET technology to deliver 3x the power cycling capability and a 15% increase in current capability compared to market alternatives.

Advanced Packaging & Efficiency

• Rugged Design: Features sintered die attach, epoxy encapsulant, and copper clip interconnects for superior durability.

• Lower Losses: Achieves 60% lower turn-on energy (EON) and 30% reduced switching losses via a soft-body diode.

• Improved Thermal Performance: Offers 22% better $R_{DS(on)}$ at 125°C compared to previous generations.

Seamless Integration

Designed as a drop-in replacement for IGBT solutions, these modules utilize an industry-standard footprint. They are compatible with existing capacitors, gate drivers, and cooling systems, eliminating the need for complex redesigns or specialized installation tools like laser welders.

Availability

Samples are available immediately, with full commercial release at distributors scheduled for early 2026.

The dream of charging an electric vehicle as easily as a smartphone just got closer to reality. Researchers at Tennessee’s Oak Ridge National Laboratory (ORNL) have successfully demonstrated a 100-kilowatt wireless charging system, a significant leap forward in EV infrastructure technology.

The Milestone Using a transmitter pad and a receiver mounted on a Hyundai Kona, the system boosted the battery by 50%—providing about 150 km of range—in less than 20 minutes. This efficiency rivals the time it takes for a traditional gas station "pit stop."

The Evolution Wireless charging has been in development for over a decade, with players like WiTricity and Momentum Dynamics testing 50–75kW systems for taxis and luxury SUVs. The new ORNL system pushes the power envelope further, making "static" charging (parking over a pad) viable for highway travel.

The Bigger Picture While ORNL refines high-power static charging, Israeli firm Electreon is deploying "dynamic" charging lanes in Europe that charge vehicles while they drive. Experts note that widespread adoption of these technologies could allow manufacturers to use smaller batteries without sacrificing range, ultimately lowering the cost of EVs and extending battery life.

Converting power electronic platforms from silicon (Si) or gallium nitride (GaN) to silicon carbide (SiC) has moved from theory to practice. Teams are doing it to gain higher efficiency, greater power density, and better thermal margins in traction inverters, fast chargers, industrial drives, photovoltaic inverters, and grid storage. SiC’s wide bandgap, high critical field, and strong thermal conductivity enable higher blocking voltages, lower switching and conduction losses at elevated temperatures, and smaller magnetics at higher switching frequencies. Device costs are falling, and 200 mm manufacturing is maturing. Today, the challenge is less about availability and more about executing the conversion well.

Every migration should start with a system audit. Set realistic efficiency targets, temperature limits, EMI requirements, and cost boundaries. Then choose the SiC device class and topology that fit your bus voltage and duty cycle. At 650 V, GaN often leads for ultra-compact, very high frequency supplies. SiC becomes attractive when designs need higher surge robustness, higher junction temperature, hard-switching capability, or strong short-circuit toughness. At 800 V and above, SiC is usually the default for traction, fast charging, and medium-voltage industrial gear thanks to voltage headroom, reliable body-diode behavior, and broad module availability.

Gate drive and switching dynamics change the most. SiC MOSFETs switch fast, with low output capacitance and an effective intrinsic diode. Rise and fall times can reach tens of kV/µs. That cuts loss but increases dv/dt stress and common-mode noise. Use isolated drivers with high CMTI, Kelvin source returns, and tuned gate resistors. Add a Miller clamp or a small negative turn-off bias to prevent false turn-on at high dv/dt. Apply snubbers or RC damping only as needed, so you do not give back the efficiency you gained. Because reverse-recovery is low, deadtime can be reduced. Prefer synchronous conduction, ZVS, or ZCS, and avoid long body-diode operation, which has a higher forward drop than the channel.

Thermal design is the next pillar. SiC can run hot, 175 to 200 °C junction ratings are common, but only if heat leaves the die predictably. Many programs realize the full benefit by upgrading packaging: sintered die attach instead of solder, short interconnects, and packages with Kelvin source pins. Module designs gain the most from double-sided cooling and baseplates with AlN or AMB ceramics, which lower thermal resistance and support higher current density. After switching losses fall, right-size heatsinks and airflow. That often saves cost and volume, not just headroom.

@https://www.powerelectronicsnews.com/converting-power-electronics-to-sic-design-thermal-and-emi-wins/